? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant parameter value operating temperature -65c to +125c storage temperature -65c to +150c rf c.w. incident power +30dbm forward bias current per port 50ma reverse applied voltage -25 volts max. operating conditions for a combination of rf power, d.c. bias and temperature: +30dbm cw @ 15ma (per diode) @+85c absolute maximum ratings t amb = +25c ( unless otherwise specified ) features ? broad bandwidth ? specified from 50 mhz to 20 ghz ? usable from 50 mhz to 26.5 ghz ? lower insertion loss and higher isolation than comparable phemt/ discrete component designs ? rugged fully monolithic ? glass encapsulated chip with polymer protective coating ? up to +30dbm c.w. power handling @ +25c ? 50 ns switching speed description the MA4SW510 is a sp5t, series-shunt, broadband, pin diode switch made with m/a-com tech?s patented hmic tm (heterolithic microwave integrated circuit) process. this process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. by also incorporating small spacing between circuit elements, the result is an hmic chip with low insertion loss and high isolation at frequencies up to 26.5ghz. it is designed to be used as a moderate power, high performance switch and provide superior performance when compared to similar designs that use discrete components. the top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. the gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. applications the MA4SW510 is a high performance switch suitable for use in multi-band ecm, radar, and instrumentation control circuits where high isolation to insertion loss ra- tios are required. with a standard 5v, ttl controlled, pin diode driver, 50ns switching speeds are achievable
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant j6 - j1 -20 ma +20 ma +20 ma +20 ma +20 ma low loss isolation isolation isolation isolation +20 ma -20 ma +20 ma +20 ma +20 ma isolation low loss isolation isolation isolation +20 ma +20 ma -20 ma +20 ma +20 ma isolation isolation low loss isolation isolation +20 ma +20 ma +20 ma -20 ma +20 ma isolation isolation isolation low loss isolation +20 ma +20 ma +20 ma +20 ma -20 ma isolation isolation isolation isolation low loss condition of rf output control level ( dc current ) at port condition of rf output j2 j3 j4 j5 j6 j2 - j1 j3 - j1 j4 - j1 j5 - j1 j6 - j1 -20 ma +20 ma +20 ma +20 ma +20 ma low loss isolation isolation isolation isolation +20 ma -20 ma +20 ma +20 ma +20 ma isolation low loss isolation isolation isolation +20 ma +20 ma -20 ma +20 ma +20 ma isolation isolation low loss isolation isolation +20 ma +20 ma +20 ma -20 ma +20 ma isolation isolation isolation low loss isolation +20 ma +20 ma +20 ma +20 ma -20 ma isolation isolation isolation isolation low loss typical driver connections condition of rf output condition of rf output condition of rf output condition of rf output note: 1.) typical switching speed is measured from 10% to 90% of the detected rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a ca pacitor between 390pf - 560pf and a resistor between 150 ? - 220? to achieve 50ns rise and fall times. rf electrical specifications @ t amb = 25c, 20ma bias current (probed on-wafer measurements) parameter frequency minimum nominal maximum units insertion loss 20 ghz 0.9 1.4 db isolation 20 ghz 28 38 db input return loss 20 ghz 22 db output return loss 20 ghz 23 db switching speed 1 10 ghz 1 50 ns compatible m/a-com tech drivers (combination of both drivers is required) madr-007097-000100 & madr-009190-000100
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant typical microwave performance insertion loss -1.000 -0.800 -0.600 -0.400 -0.200 0.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 frequency (ghz) loss (db) j2 j3 j4 j5 j6 isolation -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 frequency (ghz) isolation (db) j2 j3 j4 j5 j6
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant typical microwave performance output return loss -40 -35 -30 -25 -20 -15 -10 -5 0 02468101214161820 frequency (ghz) loss (db) j2 j3 j4 j5 j6 input return loss -40. -35. -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) loss (db) j2 j3 j4 j5 j6
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant operation of the MA4SW510 switch the simultaneous application of a negative dc current to the low loss port and positive dc current to the isolated ports as shown below in fig.1 is required for proper opera tion of the switch. the backside area of the die is the rf and dc ground return and the dc return is through the common port j1. a constant current source should be used to supply the dc control currents. the control volt ages at these points will not exceed 1.5 volts for supply currents up to 20ma. in the low loss state, the seri es diode must be forward biased and the shunt diode reverse biased. on all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. a typical bias network design that will produce >30db rf to dc isolation is shown below in figure 1 . the optimum insertion loss, p1db, ip3, and switching speed are attained by using a voltage pull-up resistor in the dc return path, j1. a minimum value of |-2v| is reco mmended using a standard, 5v ttl controlled pin driver such as m/a-com tech?s madr-007097-000100 & madr-009190-000100 used in tandem . typical 2 ? 18 ghz bias network MA4SW510 die 100 ? 39 pf 22 nh 22 pf 39 pf dc bias ( 1.2v typ.) j1 22 nh 22 pf j2 j3 j5 j6 j4 fig. 1
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant MA4SW510 chip dimensions chip dimensions* m a 0.0680 1723 b 0.0340 858 c 0.0580 1473 d 0.0370 938 e 0.0295 750 f 0.0295 750 g 0.0325 825 all pads .005 x .005 120 x 120 thickness 0.005 127 chip dimensions* dim inches m a 0.0680 1723 b 0.0340 858 c 0.0580 1473 d 0.0370 938 e 0.0295 750 f 0.0295 750 g 0.0325 825 all pads .005 x .005 120 x 120 thickness 0.005 127 * all chip tolerances are .0005? notes: 1. topside and backside metallization is gold , 2.5m thick typical. 2. yellow areas indicate bonding pads
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and product information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. v5 MA4SW510 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon sp5t pin diode switch rohs compliant assembly instructions cleanliness : the chips should be handled in a clean environment free of dust and organic contamination. electro-static sensitivity : the MA4SW510 pin diode switch is esd sensitive and proper precautions should be taken to avoid damaging the chip. esd rating is class 0 (hbm) and class c1 (cdm). wire / ribbon bonding : thermosonic wedge bonding using 0.003? x 0.00025? ribbon or 0.001? diameter gold wire is recommended. a work stage temperature of 150 o c ? 200 o c, tool tip temperature of 120 o c ?150 o c and a downward force of 18 to 22 grams should be used. if ultras onic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. excessive power or force will fracture the silicon beneath the bond pad causing it to lift. rf bond wires and ribbons should be kept as short as possible for optimum rf performance. chip mounting : hmic switches have ti-pt-au backside metall ization and can be mounted using a gold-tin eutectic solder or conductive epoxy. mounting su rface must be free of contamination and flat. eutectic die attachment: 80/20, gold-tin, solder is recommended. a re-flow oven or hot gas die bonder with a temperature setting of 290 o c is normally used to melt the solder. the chip should not be exposed to temperatures greater than 320 o c for more than 20 seconds. typically no more t han three seconds at peak temperature is required for attachment. rohs compliant solders may also be used but solders rich in tin should be avoided as they will scavenge the backside gold an d/or cause gold embrittlement. epoxy die attachment: a minimum amount of epoxy, 1?2 mils thick, sh ould be used to atta ch chip. a thin epoxy fillet should be visible around the outer perimeter of the chip after placement. epoxy cure time is typically 1 hour at 150c.
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